Recommend a packaging upgrade plan for IGBT 2023-07-12

Due to the MOSFET structure of the IGBT module, the gate of the IGBT is electrically isolated from the emitter through a layer of oxide film. Due to the thin nature of this oxide film, its breakdown voltage typically reaches 20-30V. Therefore, static electricity can also cause IGBT gate breakdown and damage, and it is necessary to provide static protection for IGBT.


Currently there are two commonly used methods for IGBT, one is: anti-static pearl cotton+anti-static paper box; Another is: anti-static plastic tray+anti-static paper box.


The former packaging (as shown in the figure below) uses anti-static pearl cotton, and its anti-static function will vary with the temperature and humidity of the external environment. In dry environments, it may even cause non anti-static;



The latter type of packaging (as shown in the figure below) uses an anti-static plastic tray, which is made of permanent anti-static material. However, due to its hard material, there is a lack of shock protection for IGBT during transportation;

To avoid this defect, Shenzhen Yufa Polymer Products Co., Ltd. has re-selected and re-designed the packaging materials for IGBT. The packaging material is made of permanent anti-static IXPE foam, which can prevent moisture, corrosion, shock, and impact, and has stable anti-static functions. The resistance value is stable within the range of 10 ^ 6-10 ^ 9 Ω, and is not affected by environmental temperature and humidity;

 

The anti-static foam tray made of anti-static IXPE foam is used for storing IGBT, which is safe, environmentally friendly, and has stable performance. Batch delivery has been successfully achieved. The following are the original IGBT drawings, packaging design drawings, and anti-static foam tray drawings for user reference:

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